![]() : 89įor various reasons Fairchild Semiconductor did not proceed with the development of PMOS integrated circuits as intensively as the involved managers wanted. Because of the lower power supply voltage, silicon gate PMOS logic is often referred to as low-voltage PMOS in contrast to the older, metal-gate PMOS as high-voltage PMOS. 16 V : 1-13 ), reducing the power consumption. The polysilicon gate material not only made the self-aligned gate possible, it also resulted in a reduced threshold voltage and consequently in a lower minimum power supply voltage (e.g. For instance, for PMOS memories this technology delivered three to five times the speed in half the chip area. The self-aligned gate process allowed tighter manufacturing tolerances and thus both smaller MOSFETs and reduced, consistent gate capacitances. Tom Klein and Federico Faggin at Fairchild Semiconductor improved the self-aligned gate process to make it commercially viable, resulting in the release of the analogue multiplexer 3708 as the first silicon-gate integrated circuit. Other companies continued to manufacture PMOS circuits such as large shift registers ( General Instrument) or the analogue multiplexer 3705 ( Fairchild Semiconductor) which were not feasible in bipolar technologies of the day.Ī major improvement came with the introduction of polysilicon self-aligned gate technology in 1968. The attempt by General Microelectronics in 1965 to develop a set of 23 custom integrated circuits for an electronic calculator for Victor Comptometer proved to be too ambitious given the reliability of PMOS circuits at the time and ultimately led to the demise of General Microelectronics. General Microelectronics introduced the first commercial PMOS circuit in 1964, a 20-bit shift register with 120 MOSFETs – at the time an incredible level of integration.
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